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SMD Type
Silicon PNP Epitaxia 2SA1365
SOT-23
Transistors IC
Unit: mm
Features
Low collector to emitter saturation voltage.
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
Super mini package for easy mounting.
1 2
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.1 1.3-0.1
Excellent linearity nof DC forward current gain.
High collector current. High gain band width product.
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector dissipation (Ta=25 ) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICM IC PC Tj Tstg Rating -25 -20 -4 -1 -700 150 125 -55 to +125 Unit V V V A mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain ( * ) Collector-emitter saturation voltage Gain band width product * It shows hFE classification in right table. Symbol Testconditons Min -25 -20 -4 -1 -1 150 -0.2 180 800 -0.5 V MHz Typ Max Unit V V V iA iA V (BR) CBO IC = -10 iA, IE = 0 V (BR) CEO IC = -100 iA,RBE = V (BR) EBO IE = -10 iA, IC = 0 ICBO IEBO hFE VCE fT VCB = -25 V, IE = 0 VEB = -2 V, IC = 0 VCE = -4 V, IC = -100 mA IC = -500 mA, IB = -25 mA VCE = -6 V, IE = 10 mA
hFE Classification
Marking hFE AE 150 300 AF 250 500 AG 400 800
+0.1 0.38-0.1
0-0.1
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